Parametric optimization for hardness of tig welded duplex stainless steel

Achieving optimal mechanical properties in welding joints hinges on employing precise parametric conditions. This is particularly crucial for Tungsten Inert Gas (TIG) welding of ASTM/UNS 2205 Duplex Stainless Steel (DSS), where attributes like hardness, ultimate tensile strength, and yield strength are paramount. Maintaining high Hardness Value (HV) demands proper welding parameters such as welding current, gas flow rate, and welding speed. To enhance DSS welding quality, especially hardness, this study utilizes the Taguchi method to optimize welding process parameters. The importance of each factor is assessed through Annova statistical analysis. The outcomes highlight the positive impact of parametric optimization on HV, as evidenced by the analysed data. Parametric optimization proves to be a potent approach for refining industrial processes like welding, with particular relevance in TIG welding of duplex stainless steel due to its mechanical robustness and corrosion resistance. Nevertheless, challenges arise due to the material's elevated hardness and low thermal conductivity, resulting in potential defects like cracks and porosity. The identification of optimal welding parameters, encompassing current, voltage, speed, and gas flow rate, helps address these challenges and advances high-quality welds. Through systematic variations and analysis of these parameters, researchers and engineers can pinpoint the optimal combination that mitigates defects while maximizing desired joint attributes. Within the realm of TIG welding of duplex stainless steel, metric optimization holds the potential to elevate welding quality, curtail costs and waste, and heighten productivity and safety. Consequently, organizations can attain enhanced performance, efficiency, and profitability within their welding processe

Optimization of process parameters of TIG welding of duplex stainless steel without filler rod by grey-Taguchi method

Input parameters of welding have played an important role in producing the quality of welding joint. Welding quality has been improved using proper process parameters with sound knowledge base. Current, welding speed and the shielding gas flow rate have been used as the most important influencing parameters of Tungsten Inert Gas (TIG) welding on Duplex Stainless Steel (DSS). In the present work, multi-objective optimization of TIG welding process parameters of Duplex Stainless Steel - ASTM/UNS 2205 has been determined. These welding process parameters have been optimized to achieve the required quality of DSS welding joints. The quality of the TIG welding on DSS has been evaluated in term of tensile test. The grey-based Taguchi technique has been used to solve this multi- optimization problem. Analysis of Variance (ANOVA) has been applied to evaluate the significanc e of the individual factors on desired results which are ultimate tensile strength, yield strength and percentage of elongation. Additional confirmatory experiment has been done to verify the optimal results. The application possibilities of the grey-based Taguchi method for incessant development of welding quality of DSS in many fields, like chemical industries, oil refineries, gas manufacturing industries etc. have been shown by this work

Optimization of process parameters of TIG welding of duplex stainless steel without filler rod by grey-Taguchi method

385-392Input parameters of welding have played an important role in producing the quality of welding joint. Welding quality has been improved using proper process parameters with sound knowledge base. Current, welding speed and the shielding gas flow rate have been used as the most important influencing parameters of Tungsten Inert Gas (TIG) welding on Duplex Stainless Steel (DSS). In the present work, multi-objective optimization of TIG welding process parameters of Duplex Stainless Steel - ASTM/UNS 2205 has been determined. These welding process parameters have been optimized to achieve the required quality of DSS welding joints. The quality of the TIG welding on DSS has been evaluated in term of tensile test. The grey-based Taguchi technique has been used to solve this multi- optimization problem. Analysis of Variance (ANOVA) has been applied to evaluate the significance of the individual factors on desired results which are ultimate tensile strength, yield strength and percentage of elongation. Additional confirmatory experiment has been done to verify the optimal results. The application possibilities of the grey-based Taguchi method for incessant development of welding quality of DSS in many fields, like chemical industries, oil refineries, gas manufacturing industries etc. have been shown by this work

Revisiting Yoyo Tricks on AES

At Asiacrypt 2017, Rønjom et al. presented key-independent distinguishers for different numbers of rounds of AES, ranging from 3 to 6 rounds, in their work titled “Yoyo Tricks with AES”. The reported data complexities for these distinguishers were 3, 4, 225.8, and 2122.83, respectively. In this work, we revisit those key-independent distinguishers and analyze their success probabilities. We show that the distinguishing algorithms provided for 5 and 6 rounds of AES in the paper of Rønjom et al. are ineffective with the proposed data complexities. Our thorough theoretical analysis has revealed that the success probability of these distinguishers for both 5-round and 6-round AES is approximately 0.5, with the corresponding data complexities mentioned earlier. We investigate the reasons behind this seemingly random behavior of those reported distinguishers. Based on our theoretical findings, we have revised the distinguishing algorithm for 5-round AES. Our revised algorithm demonstrates success probabilities of approximately 0.55 and 0.81 for 5-round AES, with data complexities of 229.95 and 230.65, respectively. We have also conducted experimental tests to validate our theoretical findings, which further support our findings. Additionally, we have theoretically demonstrated that improving the success probability of the distinguisher for 6-round AES from 0.50000 to 0.50004 would require a data complexity of 2129.15. This finding invalidates the reported distinguisher by Rønjom et al. for 6-round AES

Fully solution processed Al-TiO2-Si (MIS) structured Photo-detector

We demonstrate the fabrication of a high performance photo detector by fully solution processed technique. The detector is fabricated with photo sensitive, low temperature (200 degrees C) and sol-gel processed titanium dioxide (TiO2) dielectric material on silicon substrate in the form of MIS structure with top aluminum gate. The optical detection experiment is performed on Al-TiO2-Si (MIS) device by measuring the capacitance-voltage (CV at 100 kHz) curve within the visible region of light (365 - 700 nm). The presence of light shift the flat band voltage (V-FB) from 290 mV to 360 mV due to the generation of photo activated charge carriers by UV (365 nm) and white light, respectively. Moreover, the generation of the charge carrier increases drastically by the combination of UV and white, which resulting as a very large shift (600 mV) in the V-FB. The entire experiment was performed in normal lab conditions with open air environment, without any clean room facility

Impact of Time-dependent Annealing on TiO2 Films for CMOS application

Post-deposition annealing (PDA) is the inherent part of sol-gel fabrication process to achieve the optimum device performance, especially in CMOS applications. The annealing removes the oxygen vacancies and improves the structural order of dielectric films. The process also reduces the interface related defects and improves the interfacial properties. In this work, we have integrated the sol-gel spin-coating deposited high-TiO2 films in MOS. The films are fired at 400 degrees C for the duration of 20, 40, 60 and 80 min. The thicknesses of the films were found to be of similar to 30 nm using ellipsometry. The (Al/TiO2/p-Si) devices were examined with current-voltage (I-V) and capacitance-voltage (C-V) at room temperature to understand the influence of firing time. The C-V and I-V characteristic showed a significant dependence on annealing time such as variation in dielectric constant and leakage current. The accumulation capacitance (Cox), dielectric constant (kappa) and the equivalent oxide thickness (EOT) of the film fired for 60 min were found to be 458 pF, 33, and 4.25nm, respectively with a low leakage current density (1.09 10(-6) A/cm(2)) fired for 80 min at + 1 V

Impact of Time-dependent Annealing on TiO2 Films for CMOS application

Post-deposition annealing (PDA) is the inherent part of sol-gel fabrication process to achieve the optimum device performance, especially in CMOS applications. The annealing removes the oxygen vacancies and improves the structural order of dielectric films. The process also reduces the interface related defects and improves the interfacial properties. In this work, we have integrated the sol-gel spin-coating deposited high-TiO2 films in MOS. The films are fired at 400 degrees C for the duration of 20, 40, 60 and 80 min. The thicknesses of the films were found to be of similar to 30 nm using ellipsometry. The (Al/TiO2/p-Si) devices were examined with current-voltage (I-V) and capacitance-voltage (C-V) at room temperature to understand the influence of firing time. The C-V and I-V characteristic showed a significant dependence on annealing time such as variation in dielectric constant and leakage current. The accumulation capacitance (Cox), dielectric constant (kappa) and the equivalent oxide thickness (EOT) of the film fired for 60 min were found to be 458 pF, 33, and 4.25nm, respectively with a low leakage current density (1.09 10(-6) A/cm(2)) fired for 80 min at + 1 V

DLTS analysis of amphoteric interface defects in high-TiO2 MOS structures prepared by sol-gel spin-coating

High-kappa TiO2 thin films have been fabricated from a facile, combined sol-gel spin - coating technique on p and n type silicon substrate. XRD and Raman studies headed the existence of anatase phase of TiO2 with a small grain size of 18 nm. The refractive index `n' quantified from ellipsometry is 2.41. AFM studies suggest a high quality, pore free films with a fairly small surface roughness of 6 angstrom. The presence of Ti in its tetravalent state is confirmed by XPS analysis. The defect parameters observed at the interface of Si/TiO2 were studied by capacitance - voltage (C - V) and deep level transient spectroscopy (DLTS). The flat - band voltage (V-FB) and the density of slow interface states estimated are -0.9, -0.44 V and 5.24x10(10), 1.03x10(11) cm(-2); for the NMOS and PMOS capacitors, respectively. The activation energies, interface state densities and capture cross -sections measured by DLTS are E-V + 0.30, E-C - 0.21 eV; 8.73x10(11), 6.41x10(11) eV(-1) cm(-2) and 5.8x10(-23), 8.11x10(-23) cm(2) for the NMOS and PMOS structures, respectively. A low value of interface state density in both P-and N-MOS structures makes it a suitable alternate dielectric layer for CMOS applications. And also very low value of capture cross section for both the carriers due to the amphoteric nature of defect indicates that the traps are not aggressive recombination centers and possibly can not contribute to the device operation to a large extent. (C) 2015 Author(s)